NTMFS5C604NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Rise Time :

79.1ns

Power Dissipation-Max :

3.9W Ta 200W Tc

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

38A Ta

Fall Time (Typ) :

81.3 ns

Factory Lead Time :

18 Weeks

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

Max Junction Temperature (Tj) :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Continuous Drain Current (ID) :

40A

Element Configuration :

Single

Power Dissipation :

3.9W

Number of Pins :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Published :

2014

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Mount :

Surface Mount

Width :

4.9mm

Terminal Form :

Flat

Threshold Voltage :

2V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Height :

1.1mm

Turn-Off Delay Time :

60.3 ns

Terminal Finish :

Tin (Sn)

Number of Channels :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

8900pF @ 25V

Package / Case :

8-PowerTDFN, 5 Leads

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

776 mJ

Length :

5.9mm

Drain Current-Max (Abs) (ID) :

276A

Mounting Type :

Surface Mount

Case Connection :

DRAIN

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 50A, 10V

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

900A

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

32.9 ns

Operating Mode :

ENHANCEMENT MODE