NTMFS4C35NT1G

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Mfr.Part #
NTMFS4C35NT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 12.4A 5DFN
Stock
1,311
In Stock :
1,311

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
FET Type :
N-Channel
Published :
2014
JESD-609 Code :
e3
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Number of Pins :
5
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Drain Current-Max (Abs) (ID) :
80A
ECCN Code :
EAR99
Factory Lead Time :
16 Weeks
Radiation Hardening :
No
Pin Count :
5
Terminal Finish :
Tin (Sn)
Surface Mount :
yes
Power Dissipation-Max :
780mW Ta 33W Tc
Continuous Drain Current (ID) :
12.4A
Operating Temperature :
-55°C~150°C TJ
Halogen Free :
Halogen Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
12.4A Ta
Package / Case :
8-PowerTDFN
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Number of Channels :
1
Drain to Source Breakdown Voltage :
30V
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 4.5V
Rds On (Max) @ Id, Vgs :
3.2m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 15V
Lead Free :
Lead Free
Datasheets
NTMFS4C35NT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTMFS4C35NT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:5, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, Number of Channels:1, NTMFS4C35NT1G pinout, NTMFS4C35NT1G datasheet PDF, NTMFS4C35NT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTMFS4C35NT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTMFS4C35NT1G


N-Channel Tape & Reel (TR) 3.2m Ω @ 30A, 10V ±20V 2300pF @ 15V 15nC @ 4.5V 8-PowerTDFN

NTMFS4C35NT1G Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2300pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12.4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

NTMFS4C35NT1G Features


a continuous drain current (ID) of 12.4A
a drain-to-source breakdown voltage of 30V voltage


NTMFS4C35NT1G Applications


There are a lot of ON Semiconductor
NTMFS4C35NT1G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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