NTMFS4C302NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

5780pF @ 15V

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

900A

Number of Elements :

1

Drain-source On Resistance-Max :

0.0017Ohm

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

186 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

3.13W Ta 96W Tc

Rds On (Max) @ Id, Vgs :

1.15m Ω @ 30A, 10V

JESD-30 Code :

R-PDSO-F5

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN, 5 Leads

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

41A Ta 230A Tc

Transistor Element Material :

SILICON

Terminal Form :

Flat

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Number of Terminations :

5

Terminal Position :

Dual

Vgs (Max) :

±20V