NTMFS4983NFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

22A

Number of Pins :

5

Radiation Hardening :

No

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

320A

Power Dissipation-Max :

1.7W Ta

Fall Time (Typ) :

10.7 ns

FET Type :

N-Channel

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 15V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Mounting Type :

Surface Mount

Rise Time :

24.9ns

Number of Terminations :

5

Turn-Off Delay Time :

28.7 ns

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

22A Ta 106A Tc

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Pin Count :

5

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Terminal Position :

Dual

Number of Elements :

1

Element Configuration :

Single

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Turn On Delay Time :

13.5 ns

Pbfree Code :

yes

ECCN Code :

EAR99

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

47.9nC @ 10V

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 30A, 10V

Continuous Drain Current (ID) :

106A

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)