NTMFS4935NT1G

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Mfr.Part #
NTMFS4935NT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN, 5 Leads
Datasheet
Download
Description
MOSFET N-CH 30V 13A/93A 5DFN
Stock
12,246
In Stock :
12,246

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
93A
REACH SVHC :
No SVHC
Element Configuration :
Single
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2009
Fall Time (Typ) :
6.6 ns
Current - Continuous Drain (Id) @ 25°C :
13A Ta 93A Tc
Threshold Voltage :
1.63V
Width :
6.1mm
Nominal Vgs :
1.63 V
Length :
5.1mm
Surface Mount :
yes
Number of Pins :
5
Pin Count :
5
Terminal Position :
Dual
Factory Lead Time :
16 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain to Source Breakdown Voltage :
30V
Rise Time :
20ns
Terminal Form :
Flat
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Turn-Off Delay Time :
27.5 ns
Pbfree Code :
yes
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
49.4nC @ 10V
Case Connection :
DRAIN
Mounting Type :
Surface Mount
Height :
1.1mm
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Rds On (Max) @ Id, Vgs :
3.2m Ω @ 30A, 10V
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Number of Terminations :
5
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Package / Case :
8-PowerTDFN, 5 Leads
ECCN Code :
EAR99
Contact Plating :
Tin
Turn On Delay Time :
16.3 ns
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
0.0042Ohm
Input Capacitance (Ciss) (Max) @ Vds :
4850pF @ 15V
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Transistor Element Material :
SILICON
Power Dissipation-Max :
930mW Ta 48W Tc
Power Dissipation :
2.63W
Gate to Source Voltage (Vgs) :
20V
Datasheets
NTMFS4935NT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTMFS4935NT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:5, Mounting Type:Surface Mount, Number of Terminations:5, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, 5 Leads, NTMFS4935NT1G pinout, NTMFS4935NT1G datasheet PDF, NTMFS4935NT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTMFS4935NT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTMFS4935NT1G


N-Channel Tape & Reel (TR) 3.2m Ω @ 30A, 10V ±20V 4850pF @ 15V 49.4nC @ 10V 8-PowerTDFN, 5 Leads

IRLB8743PBF    Applications


Optimized for UPS/Inverter Applications

 High Frequency Synchronous Buck   Converters for Computer Processor Power

 High Frequency Isolated DC-DC   Converters with Synchronous Rectification

 for Telecom and Industrial use


IRLB8743PBF Descriptions


  Infineon RF transistors IRLB8743PBF   include low noise amplifiers and high linearity transistors. Low-noise devices are based on silicon bipolar technology. The medium transition frequency of FT < 20 GHz provides ease of use and stability. The breakdown voltage can safely support a power supply voltage of 5V. These transistors are suitable for using AM on VHF/UHF at frequencies up to 14 GHz. The high linearity transistor provides OIP3 (output third-order cutoff point) above 29dBm. They are based on Infineon's high-capacity silicon bipolar and SiGe:C technology and have the best noise figure. These devices are ideal for drivers, preamplifiers and buffer amplifiers.

 


IRLB8743PBF Features

Low-noise


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