NTMFS4926NT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1004pF @ 15V

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.012Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

9A Ta 44A Tc

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

17.3nC @ 10V

Rise Time :

36.9ns

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Power Dissipation-Max :

920mW Ta 21.6W Tc

Number of Terminations :

5

Terminal Position :

Dual

Pin Count :

5

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

16 Weeks

Pbfree Code :

yes

Turn-Off Delay Time :

14.7 ns

Lead Free :

Lead Free

Package / Case :

8-PowerTDFN, 5 Leads

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

8.6 ns

Fall Time (Typ) :

5.5 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

7m Ω @ 30A, 10V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

9A

Continuous Drain Current (ID) :

44A

Number of Pins :

5

Case Connection :

DRAIN

Terminal Form :

Flat

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

21.6W