NTMFS4897NFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-PowerTDFN, 5 Leads

Element Configuration :

Single

Height :

1.1mm

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

83.6nC @ 10V

Rise Time :

24ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

FET Type :

N-Channel

Pbfree Code :

yes

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

288A

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Power Dissipation-Max :

950mW Ta 96.2W Tc

Published :

2007

Number of Terminations :

5

Pin Count :

5

Lead Free :

Lead Free

JESD-609 Code :

e3

Threshold Voltage :

2V

Continuous Drain Current (ID) :

17A

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

2m Ω @ 22A, 10V

Number of Pins :

5

Fall Time (Typ) :

13 ns

Terminal Position :

Dual

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

5660pF @ 15V

Resistance :

2MOhm

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.1mm

Factory Lead Time :

2 Weeks

ECCN Code :

EAR99

Turn On Delay Time :

26 ns

Power Dissipation :

96.2W

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

17A Ta 171A Tc

Turn-Off Delay Time :

36 ns

Length :

5.1mm

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V