NTMFS4852NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

900mW Ta 86.2W Tc

Avalanche Energy Rating (Eas) :

360 mJ

Number of Pins :

5

Lead Free :

Lead Free

Case Connection :

DRAIN

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

21.1 ns

Resistance :

2.1MOhm

Power Dissipation :

2.31W

Number of Terminations :

5

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Terminal Form :

Flat

Published :

2010

RoHS Status :

ROHS3 Compliant

Width :

6.1mm

Input Capacitance (Ciss) (Max) @ Vds :

4970pF @ 12V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Transistor Application :

SWITCHING

Element Configuration :

Single

Package / Case :

8-PowerTDFN, 5 Leads

Height :

1.1mm

Surface Mount :

yes

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

5.1mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-609 Code :

e3

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

16A Ta 155A Tc

Turn-Off Delay Time :

35 ns

Vgs (Max) :

±20V

Pin Count :

5

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Rise Time :

25.6ns

Gate Charge (Qg) (Max) @ Vgs :

71.3nC @ 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 30A, 10V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Continuous Drain Current (ID) :

155A

Threshold Voltage :

1.8V

Fall Time (Typ) :

12 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)