NTMFS4841NT3G
- Mfr.Part #
- NTMFS4841NT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.3A/57A 5DFN
- Stock
- 1,392
- In Stock :
- 1,392
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1436pF @ 12V
- Number of Terminations :
- 5
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 13.1A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-609 Code :
- e3
- Terminal Form :
- Flat
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 30A, 10V
- Fall Time (Typ) :
- 7.5 ns
- Power Dissipation :
- 5W
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 8.3A
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 5
- Rise Time :
- 66.5ns
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- Surface Mount :
- yes
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Lifecycle Status :
- OBSOLETE (Last Updated: 6 days ago)
- Drain to Source Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 5
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 15.5 ns
- Power Dissipation-Max :
- 870mW Ta 41.7W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 8.3A Ta 57A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Datasheets
- NTMFS4841NT3G

N-Channel Tape & Reel (TR) 7m Ω @ 30A, 10V ±20V 1436pF @ 12V 17nC @ 4.5V 8-PowerTDFN, 5 Leads
NTMFS4841NT3G Overview
A device's maximal input capacitance is 1436pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 13.1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8.3A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 15.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTMFS4841NT3G Features
a continuous drain current (ID) of 13.1A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 15.5 ns
NTMFS4841NT3G Applications
There are a lot of ON Semiconductor
NTMFS4841NT3G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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