NTMFS4841NHT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2113pF @ 12V

JESD-30 Code :

R-PDSO-F6

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

21.9 ns

Contact Plating :

Tin

Rise Time :

20.6ns

Continuous Drain Current (ID) :

13.5A

Mounting Type :

Surface Mount

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 11.5V

Package / Case :

8-PowerTDFN, 5 Leads

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

7m Ω @ 30A, 10V

Turn On Delay Time :

12.1 ns

Published :

2009

Power Dissipation-Max :

870mW Ta 41.7W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

6.1mm

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Pin Count :

8

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Drain Current-Max (Abs) (ID) :

59A

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

5.7W

Length :

5.1mm

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

Fall Time (Typ) :

2.9 ns

Packaging :

Tape and Reel (TR)

Height :

1.1mm

Current - Continuous Drain (Id) @ 25°C :

8.6A Ta 59A Tc

Terminal Form :

Flat

Lead Free :

Lead Free

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Vgs (Max) :

±20V