NTHD2110TT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

4.5A

Number of Terminations :

8

Terminal Finish :

Tin

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.1W Ta

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

12V

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

850mV @ 250μA

Surface Mount :

yes

JESD-30 Code :

R-PDSO-C8

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.072pF @ 6V

JESD-609 Code :

e3

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.04Ohm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

40m Ω @ 6.4A, 4.5V

Drain to Source Voltage (Vdss) :

12V

Package / Case :

8-SMD, Flat Lead

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Pin Count :

8

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±8V

Terminal Form :

C BEND

Transistor Element Material :

SILICON