NTHD3100CT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

11.7ns

Surface Mount :

yes

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

6.3 ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Power Dissipation :

1.1W

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

11.7 ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Transistor Application :

SWITCHING

Number of Terminations :

8

Lead Free :

Lead Free

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.9A, 4.5V

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

16 ns

Number of Pins :

8

Weight :

4.535924g

Gate to Source Voltage (Vgs) :

8V

Published :

2005

Radiation Hardening :

No

Current Rating :

2.9A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Length :

3.05mm

Width :

1.65mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 7 hours ago)

Continuous Drain Current (ID) :

3.9A

Threshold Voltage :

-1.5V

Operating Mode :

ENHANCEMENT MODE

Height :

1.05mm

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

165pF @ 10V

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Factory Lead Time :

6 Weeks

Base Part Number :

NTHD3100C

REACH SVHC :

No SVHC

Package / Case :

8-SMD, Flat Lead

Current - Continuous Drain (Id) @ 25°C :

2.9A 3.2A

Voltage - Rated DC :

20V

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Form :

C BEND