NTHD3100CT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

165pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.9A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Power Dissipation :

1.1W

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

2.9A 3.2A

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Current Rating :

3.9A

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Pin Count :

8

Transistor Application :

SWITCHING

Max Power Dissipation :

1.1W

Package / Case :

8-SMD, Flat Lead

Base Part Number :

NTHD3100C

Number of Elements :

2

FET Feature :

Logic Level Gate

Number of Pins :

8

Voltage - Rated DC :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

3.2A

Number of Terminations :

8

Drain to Source Breakdown Voltage :

-20V

Turn-Off Delay Time :

16 ns

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

12A

Published :

2006

Drain Current-Max (Abs) (ID) :

2.9A

FET Type :

N and P-Channel

Fall Time (Typ) :

11.7 ns

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Terminal Form :

C BEND

Rise Time :

11.7ns