NTE464

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

0.3 W

Vgs(th) (Max) @ Id :

5V @ 10A

Power Dissipation (Max) :

800mW (Tc)

Number of Terminals :

4

Operating Temperature :

175°C (TJ)

Feedback Cap-Max (Crss) :

1.3 pF

Mounting Type :

Through Hole

Subcategory :

Other Transistors

Package / Case :

TO-72-3

Reach Compliance Code :

Unknown

Terminal Form :

Wire

Drain to Source Voltage (Vdss) :

25 V

FET Type :

P-Channel

JESD-30 Code :

O-MBCY-W4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Standard

ECCN Code :

EAR99

Technology :

MOSFET (Metal Oxide)

Polarity/Channel Type :

P-Channel

Configuration :

Single

Drain-source On Resistance-Max :

600 Ω

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

600Ohm @ 0A, 10V

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Package Shape :

Round

Package :

Bag

Drain Current-Max (Abs) (ID) :

0.03 A

HTS Code :

8541.21.00.95

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

10A

Manufacturer :

NTE Electronics

Surface Mount :

No

Supplier Device Package :

TO-72

DS Breakdown Voltage-Min :

25 V

Vgs (Max) :

±30V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5000 pF @ 10 V

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR