NTB30N20G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

2W Ta 214W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

81m Ω @ 15A, 10V

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Current Rating :

30A

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

30A

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Pulsed Drain Current-Max (IDM) :

90A

Transistor Element Material :

SILICON

Element Configuration :

Single

Number of Pins :

3

Fall Time (Typ) :

88 ns

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

200V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

2335pF @ 25V

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

82 ns

Avalanche Energy Rating (Eas) :

450 mJ

Packaging :

Tube

Published :

2005

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Additional Feature :

AVALANCHE RATED

Power Dissipation :

214W

Vgs (Max) :

±30V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Rise Time :

70ns

Voltage - Rated DC :

200V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB