NTB30N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

JESD-609 Code :

e0

Rise Time :

200ns

HTS Code :

8541.29.00.95

FET Type :

N-Channel

Fall Time (Typ) :

62 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

Power Dissipation-Max :

88.2W Tc

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

15V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.046Ohm

Current Rating :

30A

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 25V

Qualification Status :

Not Qualified

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

90A

Rds On (Max) @ Id, Vgs :

46m Ω @ 15A, 5V

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Number of Pins :

3

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

235

Packaging :

Tube

Continuous Drain Current (ID) :

30A

Number of Elements :

1

Pin Count :

3

Avalanche Energy Rating (Eas) :

101 mJ

Turn-Off Delay Time :

15.6 ns

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Power Dissipation :

88.2W

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Terminal Finish :

Tin/Lead (Sn/Pb)

Drive Voltage (Max Rds On,Min Rds On) :

5V

Published :

2006

Vgs (Max) :

±15V

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

60V

RoHS Status :

Non-RoHS Compliant