NTB30N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

70ns

Power Dissipation-Max :

2W Ta 214W Tc

Transistor Element Material :

SILICON

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

90A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

82 ns

Input Capacitance (Ciss) (Max) @ Vds :

2335pF @ 25V

Published :

2005

Mounting Type :

Surface Mount

Current Rating :

30A

Fall Time (Typ) :

88 ns

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Lead Free :

Lead Free

Voltage - Rated DC :

200V

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

30A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

81m Ω @ 15A, 10V

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Transistor Application :

SWITCHING

Packaging :

Tube

Avalanche Energy Rating (Eas) :

450 mJ

Gate to Source Voltage (Vgs) :

30V

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Element Configuration :

Single

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Power Dissipation :

214W

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

200V

Current - Continuous Drain (Id) @ 25°C :

30A Ta

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant