NTB18N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Number of Terminations :

2

ECCN Code :

EAR99

Terminal Position :

Single

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

5V

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

45A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.1Ohm

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

48.4W Tc

Avalanche Energy Rating (Eas) :

61 mJ

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Vgs (Max) :

±10V

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

15A

Terminal Finish :

Tin/Lead (Sn/Pb)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

240

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

100m Ω @ 7.5A, 5V

Reach Compliance Code :

not_compliant

Pin Count :

3

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2005

JESD-609 Code :

e0

Current - Continuous Drain (Id) @ 25°C :

15A Tc