NTB18N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Packaging :

Tube

Vgs (Max) :

±10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin/Lead (Sn/Pb)

Drive Voltage (Max Rds On,Min Rds On) :

5V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

45A

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Terminal Position :

Single

Published :

2005

Drain Current-Max (Abs) (ID) :

15A

Rds On (Max) @ Id, Vgs :

100m Ω @ 7.5A, 5V

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

240

Drain-source On Resistance-Max :

0.1Ohm

Power Dissipation-Max :

48.4W Tc

Avalanche Energy Rating (Eas) :

61 mJ

JESD-609 Code :

e0

Number of Elements :

1

Case Connection :

DRAIN