NTB125N02RT4G

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Mfr.Part #
NTB125N02RT4G
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 24V 95A/120.5A D2PAK
Stock
32,119
In Stock :
32,119

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
JEDEC-95 Code :
TO-220AB
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
Vgs (Max) :
±20V
HTS Code :
8541.29.00.95
Lead Free :
Lead Free
Element Configuration :
Single
Number of Elements :
1
Drain to Source Breakdown Voltage :
24V
Power Dissipation :
2.72W
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
125A
Published :
2006
Pin Count :
3
Vgs(th) (Max) @ Id :
2V @ 250μA
Drain Current-Max (Abs) (ID) :
95A
FET Type :
N-Channel
Voltage - Rated DC :
24V
Pulsed Drain Current-Max (IDM) :
250A
Gate to Source Voltage (Vgs) :
20V
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 4.5V
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
1.98W Ta 113.6W Tc
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
3440pF @ 20V
Terminal Form :
Gull wing
Terminal Finish :
Tin (Sn)
Rise Time :
39ns
JESD-609 Code :
e3
Fall Time (Typ) :
21 ns
Peak Reflow Temperature (Cel) :
260
Avalanche Energy Rating (Eas) :
120 mJ
Drain-source On Resistance-Max :
0.0062Ohm
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
95A Ta 120.5A Tc
Lifecycle Status :
OBSOLETE (Last Updated: 4 days ago)
Rds On (Max) @ Id, Vgs :
4.6m Ω @ 20A, 10V
Mounting Type :
Surface Mount
Qualification Status :
Not Qualified
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Application :
SWITCHING
Turn-Off Delay Time :
27 ns
Current Rating :
125A
Time@Peak Reflow Temperature-Max (s) :
30
Datasheets
NTB125N02RT4G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTB125N02RT4G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, NTB125N02RT4G pinout, NTB125N02RT4G datasheet PDF, NTB125N02RT4G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTB125N02RT4G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTB125N02RT4G


N-Channel Tape & Reel (TR) 4.6m Ω @ 20A, 10V ±20V 3440pF @ 20V 28nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NTB125N02RT4G Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 120 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3440pF @ 20V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 125A.With a drain-source breakdown voltage of 24V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 24V.95A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 27 ns.Peak drain current for this device is 250A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

NTB125N02RT4G Features


the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 125A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 250A.


NTB125N02RT4G Applications


There are a lot of ON Semiconductor
NTB125N02RT4G applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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