NTB18N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

48.4W Tc

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

61 mJ

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.09Ohm

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

45A

Number of Terminations :

2

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

15A

Rds On (Max) @ Id, Vgs :

90m Ω @ 7.5A, 10V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Number of Elements :

1

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

60V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ