NSVBA143ZDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 10

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

2 PNP - Pre-Biased (Dual)

Voltage - Collector Emitter Breakdown (Max) :

50V

Number of Terminations :

6

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Resistor - Base (R1) :

4.7k Ω

Resistor - Emitter Base (R2) :

47k Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Flat

Reach Compliance Code :

Compliant

Power - Max :

500mW

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Factory Lead Time :

17 Weeks

JESD-30 Code :

R-PDSO-F6

Current - Collector (Ic) (Max) :

100mA

Series :

Automotive, AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Transistor Element Material :

SILICON