NSVB114YPDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Published :

2014

Mounting Type :

Surface Mount

Power - Max :

500mW

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Emitter Base (R2) :

47k Ω

Max Collector Current :

100mA

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 4.7

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Voltage (VCEO) :

250mV

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Pbfree Code :

yes

Terminal Form :

Flat

Max Power Dissipation :

500mW

Resistor - Base (R1) :

10k Ω

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F6

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN AND PNP

Reference Standard :

AEC-Q101