NSV40300MDR2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

170mV @ 200mA, 2A

Pin Count :

8

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 1A 2V

Number of Elements :

2

Surface Mount :

yes

Mounting Type :

Surface Mount

Max Collector Current :

3A

Max Power Dissipation :

653mW

Polarity :

PNP

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Collector Emitter Voltage (VCEO) :

170mV

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Transistor Application :

SWITCHING

Factory Lead Time :

32 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Collector Emitter Breakdown Voltage :

40V

Power - Max :

653mW

Published :

2011

Radiation Hardening :

No

Transistor Type :

2 PNP (Dual)

Configuration :

SEPARATE, 2 ELEMENTS

Pbfree Code :

yes

Transition Frequency :

100MHz

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Lead Free

ECCN Code :

EAR99

Terminal Form :

Gull wing

Number of Pins :

8

JESD-609 Code :

e3

Frequency - Transition :

100MHz

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

40V