NSV40200LT1G
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- Mfr.Part #
- NSV40200LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-3
- Stock
- 5,880
- In Stock ：
- 5,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.64mm
- Factory Lead Time :
- 8 Weeks
- Gain Bandwidth Product :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 40V
- Emitter Base Voltage (VEBO) :
- -7V
- Element Configuration :
- Single
- Max Collector Current :
- 2A
- Length :
- 3.04mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 40V
- Weight :
- 1.437803g
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Published :
- 2011
- Halogen Free :
- Halogen Free
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 500mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 460mW
- Collector Emitter Saturation Voltage :
- -135mV
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Max Frequency :
- 100MHz
- Height :
- 1.11mm
- Vce Saturation (Max) @ Ib, Ic :
- 170mV @ 200mA, 2A
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Base Part Number :
- NSS40200
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- -40V
- Surface Mount :
- yes
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- NSV40200LT1G
PNP -55°C~150°C TJ 100nA ICBO PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSV40200LT1G Overview
This device has a DC current gain of 220 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -135mV.A VCE saturation (Max) of 170mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 2A volts is possible.
NSV40200LT1G Features
the DC current gain for this device is 220 @ 500mA 2V
a collector emitter saturation voltage of -135mV
the vce saturation(Max) is 170mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 100MHz
NSV40200LT1G Applications
There are a lot of ON Semiconductor
NSV40200LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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