NSTB60BDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 120 @ 5mA 10V

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Number of Terminations :

6

Qualification Status :

Not Qualified

Number of Elements :

2

hFE Min :

80

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

47k Ω

Max Power Dissipation :

250mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA

Resistor - Base (R1) :

22k Ω

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Pin Count :

6

JESD-609 Code :

e3

Transition Frequency :

140MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2002

Base Part Number :

NSTB60B

Continuous Collector Current :

-150mA

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 2.13

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Dual

Polarity :

NPN, PNP

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Surface Mount :

yes

Power Dissipation :

256mW

Frequency - Transition :

140MHz

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Current Rating :

-1mA

Factory Lead Time :

8 Weeks

Number of Pins :

6

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Max Collector Current :

150mA

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C