NSTB1002DXV5T1
- Mfr.Part #
- NSTB1002DXV5T1
- Manufacturer
- onsemi
- Package / Case
- SOT-553
- Datasheet
- Download
- Description
- TRANS NPN PREBIAS/PNP 0.5W SOT55
- Stock
- 28,682
- In Stock :
- 28,682
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 1
- Terminal Position :
- Dual
- Continuous Collector Current :
- -200mA
- Resistor - Emitter Base (R2) :
- 47k Ω
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V / 100 @ 1mA 10V
- Package / Case :
- SOT-553
- Max Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Max Operating Temperature :
- 150°C
- Resistor - Base (R1) :
- 47k Ω
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity :
- NPN, PNP
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 250mV
- Factory Lead Time :
- 17 Weeks
- Current - Collector Cutoff (Max) :
- 500nA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V 40V
- Current Rating :
- 100mA
- Number of Terminations :
- 5
- Terminal Form :
- Flat
- Transistor Type :
- 1 NPN Pre-Biased, 1 PNP
- Packaging :
- Tape and Reel (TR)
- Configuration :
- CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Min Operating Temperature :
- -55°C
- Width :
- 1.3mm
- Collector Emitter Saturation Voltage :
- 250mV
- Length :
- 1.7mm
- Max Collector Current :
- 200mA
- Height :
- 600μm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transition Frequency :
- 250MHz
- hFE Min :
- 250
- Current - Collector (Ic) (Max) :
- 100mA 200mA
- Pbfree Code :
- yes
- Power Dissipation :
- 357mW
- Surface Mount :
- yes
- Turn On Time-Max (ton) :
- 70ns
- Lead Free :
- Lead Free
- Number of Elements :
- 2
- JESD-609 Code :
- e3
- Number of Pins :
- 5
- Pin Count :
- 5
- Turn Off Time-Max (toff) :
- 300ns
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA
- Qualification Status :
- Not Qualified
- Frequency - Transition :
- 250MHz
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Datasheets
- NSTB1002DXV5T1

NSTB1002DXV5T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at
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