NST30010MXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Height :

600μm

Max Breakdown Voltage :

30V

Terminal Form :

Flat

Collector Emitter Saturation Voltage :

-600mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

500mW

Polarity :

PNP

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Base Voltage (VCBO) :

30V

ECCN Code :

EAR99

Max Power Dissipation :

661mW

Lead Free :

Lead Free

Max Collector Current :

100mA

Number of Elements :

2

Transistor Type :

2 PNP (Dual) Matched Pair

Mounting Type :

Surface Mount

Number of Pins :

6

Frequency :

100MHz

Radiation Hardening :

No

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

JESD-609 Code :

e3

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Length :

1.7mm

Element Configuration :

Dual

Gain Bandwidth Product :

100MHz

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Package / Case :

SOT-563, SOT-666

Collector Emitter Voltage (VCEO) :

30V

Published :

2006

Transistor Element Material :

SILICON

Pin Count :

6

Base Part Number :

NST30010M

Surface Mount :

yes

Power Dissipation :

661mW

Collector Emitter Breakdown Voltage :

30V

Transistor Application :

AMPLIFIER

Factory Lead Time :

17 Weeks

Packaging :

Tape and Reel (TR)

Width :

1.3mm

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

15nA ICBO