NST3904F3T5G
- Mfr.Part #
- NST3904F3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-1123
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT1123
- Stock
- 319,086
- In Stock :
- 319,086
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 200MHz
- Terminal Form :
- Flat
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Base Part Number :
- NST3904
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Turn On Time-Max (ton) :
- 70ns
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Power Dissipation :
- 347mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Max Breakdown Voltage :
- 40V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2008
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 40V
- Power - Max :
- 290mW
- ECCN Code :
- EAR99
- Frequency :
- 200MHz
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 290mW
- Package / Case :
- SOT-1123
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 9 Weeks
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 200mA
- Transition Frequency :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Datasheets
- NST3904F3T5G

NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN SOT-1123 Tape & Reel (TR) Surface Mount
NST3904F3T5G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.200MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
NST3904F3T5G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
NST3904F3T5G Applications
There are a lot of ON Semiconductor
NST3904F3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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