NSS60201LT1G
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- Mfr.Part #
- NSS60201LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A SOT23-3
- Stock
- 8,327
- In Stock ：
- 8,327
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 8V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- NSS60201
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- hFE Min :
- 160
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 140mV @ 200mA, 2A
- Max Collector Current :
- 2A
- Power Dissipation :
- 540mW
- Collector Base Voltage (VCBO) :
- 140V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Power Dissipation :
- 460mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1A 2V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Published :
- 2004
- Collector Emitter Breakdown Voltage :
- 60V
- Halogen Free :
- Halogen Free
- Power - Max :
- 460mW
- Datasheets
- NSS60201LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSS60201LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 140mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 2A volts.
NSS60201LT1G Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 140mV @ 200mA, 2A
the emitter base voltage is kept at 8V
a transition frequency of 100MHz
NSS60201LT1G Applications
There are a lot of ON Semiconductor
NSS60201LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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