NSS60200LT1G
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- Mfr.Part #
- NSS60200LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 20,930
- In Stock ：
- 20,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 200mA, 2A
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Halogen Free :
- Halogen Free
- Surface Mount :
- yes
- Number of Terminations :
- 3
- Max Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Published :
- 2007
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- PNP
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Base Part Number :
- NSS60200
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Width :
- 1.4mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 2V
- hFE Min :
- 150
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Saturation Voltage :
- -30mV
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Max Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 540mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Height :
- 1.01mm
- Radiation Hardening :
- No
- Power - Max :
- 460mW
- Power Dissipation :
- 540mW
- Length :
- 3.04mm
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Datasheets
- NSS60200LT1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSS60200LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -30mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 200mA, 2A.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
NSS60200LT1G Features
the DC current gain for this device is 150 @ 500mA 2V
a collector emitter saturation voltage of -30mV
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS60200LT1G Applications
There are a lot of ON Semiconductor
NSS60200LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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