NP80N055KLE-E1-AY

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Published :

2007

Power Dissipation-Max :

1.8W Ta 120W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Fall Time (Typ) :

11 ns

Pulsed Drain Current-Max (IDM) :

200A

Number of Elements :

1

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Operating Temperature :

175°C TJ

Terminal Form :

Gull wing

FET Type :

N-Channel

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

55V

Continuous Drain Current (ID) :

80A

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Rise Time :

10ns

Turn On Delay Time :

22 ns

Turn-Off Delay Time :

62 ns

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

55V

Power Dissipation :

1.8W

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Lead Free :

Lead Free