NP80N04PUG-E1B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Radiation Hardening :

No

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 40A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2009

DS Breakdown Voltage-Min :

40V

Drain to Source Voltage (Vdss) :

40V

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

7350pF @ 25V

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0045ohm

Turn-Off Delay Time :

65 ns

Operating Mode :

ENHANCEMENT MODE

Rise Time :

23ns

FET Type :

N-Channel

Number of Pins :

3

Power Dissipation-Max :

1.8W Ta 115W Tc

Fall Time (Typ) :

11 ns

Turn On Delay Time :

32 ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Pin Count :

3

Terminal Form :

Gull wing

Vgs (Max) :

±20V

HTS Code :

8541.29.00.95

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Continuous Drain Current (ID) :

80A

Operating Temperature :

175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)