NP80N04PLG-E1B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 40A, 10V

DS Breakdown Voltage-Min :

40V

Vgs (Max) :

±20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

1.8W Ta 115W Tc

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Terminal Form :

Gull wing

Number of Pins :

3

ECCN Code :

EAR99

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

0.0045ohm

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Continuous Drain Current (ID) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Rise Time :

18ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Pin Count :

3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

74 ns

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

17 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

8 ns

Input Capacitance (Ciss) (Max) @ Vds :

6900pF @ 25V

Operating Temperature :

175°C TJ

Case Connection :

DRAIN

Published :

2009

Number of Elements :

1

Mounting Type :

Surface Mount