NJD2873T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

Voltage - Rated DC :

50V

Number of Pins :

3

Length :

6.73mm

Element Configuration :

Single

Number of Terminations :

2

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

300mV @ 50mA, 1A

Width :

6.22mm

JESD-30 Code :

R-PSSO-G2

Height :

2.38mm

Collector Emitter Breakdown Voltage :

50V

Operating Temperature :

-65°C~175°C TJ

Collector Base Voltage (VCBO) :

50V

Polarity/Channel Type :

NPN

Transition Frequency :

65MHz

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Max Breakdown Voltage :

50V

Current Rating :

2A

Gain Bandwidth Product :

65MHz

Mount :

Surface Mount

Base Part Number :

NJD2873

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

Contact Plating :

Tin

Frequency :

65MHz

Max Power Dissipation :

1.68W

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

hFE Min :

120

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

1.68W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Max Collector Current :

2A

Transistor Type :

NPN

Pin Count :

3

Collector Emitter Voltage (VCEO) :

50V

Published :

2005

Collector Emitter Saturation Voltage :

300mV

Lead Free :

Lead Free

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

JESD-609 Code :

e3