NJD2873T4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

50V

Polarity/Channel Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Case Connection :

COLLECTOR

Mount :

Surface Mount

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

Height :

2.38mm

Power Dissipation :

1.68W

Collector Emitter Saturation Voltage :

300mV

Lead Free :

Lead Free

Transistor Application :

AMPLIFIER

Number of Terminations :

2

Voltage - Rated DC :

50V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Max Power Dissipation :

1.68W

Width :

6.22mm

Transition Frequency :

65MHz

Base Part Number :

NJD2873

Pin Count :

3

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

65MHz

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

300mV @ 50mA, 1A

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Type :

NPN

Max Collector Current :

2A

Current Rating :

2A

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3

Operating Temperature :

-65°C~175°C TJ

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Length :

6.73mm

Transistor Element Material :

SILICON

Frequency :

65MHz

hFE Min :

120

JESD-609 Code :

e3

Published :

2005

Radiation Hardening :

No