NDP6060

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

100W Tc

Weight :

1.8g

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drain to Source Breakdown Voltage :

60V

Current Rating :

48A

Resistance :

25mOhm

Power Dissipation :

100W

Continuous Drain Current (ID) :

48A

Factory Lead Time :

9 Weeks

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

200 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Element Configuration :

Single

Radiation Hardening :

No

Rise Time :

145ns

Turn-Off Delay Time :

28 ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

25m Ω @ 24A, 10V

Published :

1998

Fall Time (Typ) :

77 ns

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Operating Temperature :

-65°C~175°C TJ

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Threshold Voltage :

2.9V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Voltage - Rated DC :

60V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

ECCN Code :

EAR99

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

FET Type :

N-Channel

Mount :

Through Hole

Turn On Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V