NDP6020P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

50mOhm

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Width :

4.7mm

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 10V

Length :

10.67mm

Drain to Source Breakdown Voltage :

-20V

Published :

1998

Threshold Voltage :

-700mV

Number of Pins :

3

Package / Case :

TO-220-3

Rise Time :

27ns

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

70A

Lead Free :

Lead Free

Turn-Off Delay Time :

120 ns

Mount :

Through Hole

Continuous Drain Current (ID) :

-24A

ECCN Code :

EAR99

Weight :

1.8g

JESD-609 Code :

e3

Turn On Delay Time :

15 ns

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Number of Terminations :

3

Power Dissipation-Max :

60W Tc

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

50m Ω @ 12A, 4.5V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

60W

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current Rating :

-24A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Voltage - Rated DC :

-20V

Fall Time (Typ) :

70 ns

Current - Continuous Drain (Id) @ 25°C :

24A Tc

REACH SVHC :

No SVHC

Element Configuration :

Single

Vgs (Max) :

±8V

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Terminal Finish :

Tin (Sn)

Height :

16.3mm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V

Operating Temperature :

-65°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V