NDP6020P
- Mfr.Part #
- NDP6020P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 29,318
- In Stock :
- 29,318
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Weight :
- 1.8g
- Turn On Delay Time :
- 15 ns
- Gate to Source Voltage (Vgs) :
- 8V
- Height :
- 16.3mm
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.67mm
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 120 ns
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Current Rating :
- -24A
- FET Type :
- P-Channel
- Pulsed Drain Current-Max (IDM) :
- 70A
- Number of Terminations :
- 3
- Vgs (Max) :
- ±8V
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 20V
- Resistance :
- 50mOhm
- Drain to Source Breakdown Voltage :
- -20V
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Published :
- 1998
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1590pF @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 12A, 4.5V
- Operating Temperature :
- -65°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Power Dissipation :
- 60W
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Width :
- 4.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 5V
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Rise Time :
- 27ns
- Voltage - Rated DC :
- -20V
- Fall Time (Typ) :
- 70 ns
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- -24A
- Factory Lead Time :
- 10 Weeks
- Threshold Voltage :
- -700mV
- Packaging :
- Tube
- Power Dissipation-Max :
- 60W Tc
- Datasheets
- NDP6020P

P-Channel Tube 50m Ω @ 12A, 4.5V ±8V 1590pF @ 10V 35nC @ 5V 20V TO-220-3
The NDP6020P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. This device is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP6020P Features
-24 A, -20 V. RDS(ON)= 0.05 W @ VGS= -4.5 V.
RDS(ON)= 0.07W @ VGS= -2.7 V.
RDS(ON)= 0.075 W @ VGS= -2.5 V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP6020P Applications
Automotive,
Power Management,
Motor Drive & Control
Data center & enterprise computing
Enterprise machine
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