NDP6020P

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Mfr.Part #
NDP6020P
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Stock
29,318
In Stock :
29,318

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Weight :
1.8g
Turn On Delay Time :
15 ns
Gate to Source Voltage (Vgs) :
8V
Height :
16.3mm
JEDEC-95 Code :
TO-220AB
Length :
10.67mm
Additional Feature :
LOGIC LEVEL COMPATIBLE
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Turn-Off Delay Time :
120 ns
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
4.5V
Current Rating :
-24A
FET Type :
P-Channel
Pulsed Drain Current-Max (IDM) :
70A
Number of Terminations :
3
Vgs (Max) :
±8V
REACH SVHC :
No SVHC
JESD-609 Code :
e3
Drain to Source Voltage (Vdss) :
20V
Resistance :
50mOhm
Drain to Source Breakdown Voltage :
-20V
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Published :
1998
Mount :
Through Hole
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
1590pF @ 10V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Rds On (Max) @ Id, Vgs :
50m Ω @ 12A, 4.5V
Operating Temperature :
-65°C~175°C TJ
Vgs(th) (Max) @ Id :
1V @ 250μA
Power Dissipation :
60W
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Width :
4.7mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 5V
Number of Pins :
3
Radiation Hardening :
No
Transistor Element Material :
SILICON
Rise Time :
27ns
Voltage - Rated DC :
-20V
Fall Time (Typ) :
70 ns
Package / Case :
TO-220-3
Continuous Drain Current (ID) :
-24A
Factory Lead Time :
10 Weeks
Threshold Voltage :
-700mV
Packaging :
Tube
Power Dissipation-Max :
60W Tc
Datasheets
NDP6020P
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor NDP6020P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-65°C~175°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, NDP6020P pinout, NDP6020P datasheet PDF, NDP6020P amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor NDP6020P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor NDP6020P


P-Channel Tube 50m Ω @ 12A, 4.5V ±8V 1590pF @ 10V 35nC @ 5V 20V TO-220-3

NDP6020P Description

The NDP6020P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. This device is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP6020P Features

-24 A, -20 V. RDS(ON)= 0.05 W @ VGS= -4.5 V.
RDS(ON)= 0.07W @ VGS= -2.7 V.
RDS(ON)= 0.075 W @ VGS= -2.5 V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP6020P Applications

Automotive,
Power Management,
Motor Drive & Control
Data center & enterprise computing
Enterprise machine
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