MTM78E2B0LBF

Manufacturer :

Panasonic

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

200 ns

Height :

600μm

Rds On (Max) @ Id, Vgs :

25m Ω @ 2A, 4V

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.025Ohm

Fall Time (Typ) :

1.5 μs

Width :

1.7mm

Gate to Source Voltage (Vgs) :

12V

Length :

2mm

Element Configuration :

Single

Power Dissipation :

700mW

DS Breakdown Voltage-Min :

20V

Nominal Vgs :

850 mV

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

8

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Published :

2011

FET Feature :

Standard

Rise Time :

500ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Transistor Element Material :

SILICON

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

4A

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

1.3V @ 1mA

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

Max Power Dissipation :

700mW

Package / Case :

8-SMD, Flat Lead

Turn-Off Delay Time :

2 μs

Factory Lead Time :

10 Weeks

Number of Pins :

8

Power - Max :

150mW

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Base Part Number :

MTM78E2B

Drain Current-Max (Abs) (ID) :

4A