MTM761100LBF
- Mfr.Part #
- MTM761100LBF
- Manufacturer
- Panasonic
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 4A WSMINI6
- Stock
- 91,042
- In Stock :
- 91,042
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 700μm
- Nominal Vgs :
- -650 mV
- Reach Compliance Code :
- Unknown
- Element Configuration :
- Single
- Resistance :
- 42mOhm
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 1A, 4V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 700mW Ta
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Package / Case :
- 6-SMD, Flat Leads
- Vgs (Max) :
- ±8V
- Operating Temperature :
- 150°C TJ
- Drain Current-Max (Abs) (ID) :
- 4A
- REACH SVHC :
- No SVHC
- Length :
- 2mm
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- -4A
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 700mW
- FET Type :
- P-Channel
- Drain to Source Breakdown Voltage :
- -12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 1V @ 1mA
- Gate to Source Voltage (Vgs) :
- 8V
- Width :
- 1.7mm
- Number of Terminations :
- 6
- Published :
- 2010
- Number of Pins :
- 6
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4V
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 10 Weeks
- Drain to Source Voltage (Vdss) :
- 12V
- Datasheets
- MTM761100LBF

P-Channel Tape & Reel (TR) 42m Ω @ 1A, 4V ±8V 1200pF @ 10V 12V 6-SMD, Flat Leads
MTM761100LBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1200pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -12V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -12V.There is no drain current on this device since the maximum continuous current it can conduct is 4A.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4V).
MTM761100LBF Features
a continuous drain current (ID) of -4A
a drain-to-source breakdown voltage of -12V voltage
a 12V drain to source voltage (Vdss)
MTM761100LBF Applications
There are a lot of Panasonic Electronic Components
MTM761100LBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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