MMSTA56T146
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- Mfr.Part #
- MMSTA56T146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SMT3
- Stock
- 30
- In Stock ：
- 30
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- TIN SILVER COPPER
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Transition Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- -4V
- Voltage - Rated DC :
- -80V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Power - Max :
- 350mW
- Packaging :
- Tape and Reel (TR)
- HTS Code :
- 8541.21.00.95
- JESD-30 Code :
- R-PDSO-G3
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Current - Collector Cutoff (Max) :
- 1μA
- VCEsat-Max :
- 0.25 V
- Current Rating :
- -500mA
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 80V
- Base Part Number :
- STA56
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Number of Pins :
- 59
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Collector Current :
- 500mA
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 350mW
- Published :
- 2008
- Collector Emitter Voltage (VCEO) :
- 250mV
- Gain Bandwidth Product :
- 50MHz
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MMSTA56T146
PNP 150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMSTA56T146 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMSTA56T146 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMSTA56T146 Applications
There are a lot of ROHM Semiconductor
MMSTA56T146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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