MMST2222A-7
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- Mfr.Part #
- MMST2222A-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT323
- Stock
- 41,839
- In Stock ：
- 41,839
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Number of Terminations :
- 3
- Length :
- 2.2mm
- Terminal Finish :
- Matte Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Published :
- 2007
- Pbfree Code :
- yes
- Max Power Dissipation :
- 200mW
- Element Configuration :
- Single
- Factory Lead Time :
- 19 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- 600mA
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 600mA
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Package / Case :
- SC-70, SOT-323
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 75V
- Max Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Current Rating :
- 600mA
- hFE Min :
- 100
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 300MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Turn Off Time-Max (toff) :
- 285ns
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Voltage (VCEO) :
- 40V
- Height :
- 1mm
- Width :
- 1.35mm
- Gain Bandwidth Product :
- 300MHz
- Transition Frequency :
- 300MHz
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Weight :
- 6.010099mg
- Base Part Number :
- MMST2222A
- Number of Pins :
- 3
- Voltage - Rated DC :
- 40V
- Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Datasheets
- MMST2222A-7
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMST2222A-7-F Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 600mA is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 600mA.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 600mA volts.
MMST2222A-7-F Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MMST2222A-7-F Applications
There are a lot of Diodes Incorporated
MMST2222A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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