MMST8098T146
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- Mfr.Part #
- MMST8098T146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.2A SMT3
- Stock
- 32,754
- In Stock ：
- 32,754
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 75
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 200mA
- Collector Emitter Breakdown Voltage :
- 60V
- Max Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 400mV
- Max Operating Temperature :
- 150°C
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Published :
- 2005
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 350MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Max Power Dissipation :
- 350mW
- Collector Base Voltage (VCBO) :
- 60V
- Continuous Collector Current :
- 200mA
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Base Part Number :
- MMST8098
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Radiation Hardening :
- No
- Datasheets
- MMST8098T146
NPN 100nA TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMST8098T146 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMST8098T146 Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
MMST8098T146 Applications
There are a lot of ROHM Semiconductor
MMST8098T146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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