MMBTA64LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

1.5V

Number of Pins :

3

JESD-609 Code :

e3

Base Part Number :

MMBTA64

Collector Emitter Breakdown Voltage :

30V

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

30V

Published :

1998

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

225mW

Mounting Type :

Surface Mount

hFE Min :

10000

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

500mA

Surface Mount :

yes

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

10V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20000 @ 100mA 5V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Transition Frequency :

125MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100nA ICBO

Length :

3.04mm

ECCN Code :

EAR99

Contact Plating :

Tin

Polarity :

PNP

Pbfree Code :

yes

Halogen Free :

Halogen Free

Terminal Form :

Gull wing

Continuous Collector Current :

-500mA

Transistor Type :

PNP - Darlington

Lead Free :

Lead Free

Max Power Dissipation :

225mW

Pin Count :

3

Voltage - Rated DC :

-30V

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

30V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Factory Lead Time :

11 Weeks

Max Breakdown Voltage :

30V

Current Rating :

-500mA

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.4mm

Height :

1.01mm

Transistor Element Material :

SILICON

Frequency - Transition :

125MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual