MMBTA63LT1G
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- Mfr.Part #
- MMBTA63LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SOT23-3
- Stock
- 2,637
- In Stock ：
- 2,637
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Frequency - Transition :
- 125MHz
- Terminal Form :
- Gull wing
- Halogen Free :
- Halogen Free
- Max Breakdown Voltage :
- 30V
- Weight :
- 4.535924g
- Factory Lead Time :
- 12 Weeks
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Continuous Collector Current :
- -500mA
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 30V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.04mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Max Power Dissipation :
- 225mW
- Transition Frequency :
- 125MHz
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity :
- PNP
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Surface Mount
- hFE Min :
- 5000
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2005
- Collector Emitter Breakdown Voltage :
- 30V
- Width :
- 1.4mm
- Collector Emitter Saturation Voltage :
- 1.5V
- Current Rating :
- -500mA
- Pin Count :
- 3
- Power Dissipation :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Height :
- 1.01mm
- Emitter Base Voltage (VEBO) :
- 10V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- -30V
- Base Part Number :
- MMBTA63
- JESD-609 Code :
- e3
- Packaging :
- Cut Tape (CT)
- Number of Terminations :
- 3
- Transistor Type :
- PNP - Darlington
- Datasheets
- MMBTA63LT1G
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
MMBTA63LT1G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 500mA volts is possible.
MMBTA63LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63LT1G Applications
There are a lot of ON Semiconductor
MMBTA63LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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