MMBTA63LT1
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- Mfr.Part #
- MMBTA63LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS SS DARL PNP 30V SOT23
- Stock
- 34,740
- In Stock ：
- 34,740
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Current Rating :
- -500mA
- Length :
- 3.04mm
- Number of Pins :
- 3
- Power Dissipation :
- 225mW
- Collector Emitter Breakdown Voltage :
- 30V
- Frequency - Transition :
- 125MHz
- Voltage - Rated DC :
- -30V
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 1.5V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 125MHz
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Halogen Free :
- Halogen Free
- hFE Min :
- 5000
- Pbfree Code :
- yes
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.01mm
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Width :
- 1.4mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Continuous Collector Current :
- -500mA
- Transistor Type :
- PNP - Darlington
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- MMBTA63
- Factory Lead Time :
- 12 Weeks
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Max Power Dissipation :
- 225mW
- Polarity :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Packaging :
- Cut Tape (CT)
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Weight :
- 4.535924g
- Datasheets
- MMBTA63LT1
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
MMBTA63LT1G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 500mA volts is possible.
MMBTA63LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63LT1G Applications
There are a lot of ON Semiconductor
MMBTA63LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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