MMBTA63

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Height :

1mm

Current - Collector Cutoff (Max) :

100nA ICBO

Current Rating :

-500mA

Collector Emitter Saturation Voltage :

1.5V

Weight :

7.994566mg

Collector Emitter Breakdown Voltage :

30V

Radiation Hardening :

No

Number of Terminations :

3

Factory Lead Time :

19 Weeks

Transistor Type :

PNP - Darlington

hFE Min :

5000

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Transistor Element Material :

SILICON

Max Breakdown Voltage :

30V

Number of Pins :

3

Element Configuration :

Single

Collector Base Voltage (VCBO) :

30V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Voltage - Rated DC :

-30V

Operating Temperature :

-55°C~150°C TJ

Power - Max :

300mW

Mount :

Surface Mount

Series :

Automotive, AEC-Q101

Frequency - Transition :

125MHz

Max Collector Current :

500mA

Polarity :

PNP

ECCN Code :

EAR99

Length :

3.05mm

Terminal Form :

Gull wing

Width :

1.4mm

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

300mW

Published :

2008

Emitter Base Voltage (VEBO) :

10V

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

30V

Number of Elements :

1

Base Part Number :

MMBTA63

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Transition Frequency :

125MHz