MMBTA56WT1G

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Mfr.Part #
MMBTA56WT1G
Manufacturer
onsemi
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS PNP 80V 0.5A SC70-3
Stock
5,056
In Stock :
5,056

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
150mW
Emitter Base Voltage (VEBO) :
4V
Transistor Application :
AMPLIFIER
hFE Min :
100
Power Dissipation :
150mW
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
80V
Collector Emitter Saturation Voltage :
-250mV
Contact Plating :
Tin
Terminal Form :
Gull wing
Number of Terminations :
3
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Max Breakdown Voltage :
80V
Gain Bandwidth Product :
50MHz
Peak Reflow Temperature (Cel) :
260
Collector Emitter Voltage (VCEO) :
80V
Base Part Number :
MMBTA56
Voltage - Rated DC :
-80V
Factory Lead Time :
5 Weeks
Package / Case :
SC-70, SOT-323
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Transition Frequency :
50MHz
Lead Free :
Lead Free
Surface Mount :
yes
Transistor Element Material :
SILICON
Element Configuration :
Single
Number of Elements :
1
Mounting Type :
Surface Mount
Terminal Position :
Dual
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 1V
Pin Count :
3
JESD-609 Code :
e3
REACH SVHC :
No SVHC
Transistor Type :
PNP
Frequency :
50MHz
Number of Pins :
3
Max Collector Current :
500mA
Published :
2005
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
80V
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
40
Current - Collector Cutoff (Max) :
100nA
Packaging :
Tape and Reel (TR)
Current Rating :
-500mA
Datasheets
MMBTA56WT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBTA56WT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:MMBTA56, Package / Case:SC-70, SOT-323, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, MMBTA56WT1G pinout, MMBTA56WT1G datasheet PDF, MMBTA56WT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBTA56WT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBTA56WT1G


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount

MMBTA56WT1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

MMBTA56WT1G Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz


MMBTA56WT1G Applications


There are a lot of ON Semiconductor
MMBTA56WT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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