MMBTA56LT3G
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- Mfr.Part #
- MMBTA56LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SOT23-3
- Stock
- 3,618
- In Stock ：
- 3,618
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 80V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.4mm
- Transition Frequency :
- 50MHz
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Height :
- 1.01mm
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 50MHz
- Voltage - Rated DC :
- -80V
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MMBTA56
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Type :
- GENERAL PURPOSE
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Current Rating :
- -500mA
- Power - Max :
- 225mW
- Frequency :
- 50MHz
- Length :
- 3.04mm
- Collector Emitter Saturation Voltage :
- -250mV
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 80V
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 80V
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 500mA
- Published :
- 2006
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Max Power Dissipation :
- 225mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 4V
- Element Configuration :
- Single
- hFE Min :
- 100
- Datasheets
- MMBTA56LT3G
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA56LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA56LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMBTA56LT3G Applications
There are a lot of ON Semiconductor
MMBTA56LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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