MMBTA55LT3

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Mfr.Part #
MMBTA55LT3
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 60V 0.5A SOT23-3
Stock
8,503
In Stock :
8,503

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Terminal Position :
Dual
Packaging :
Tape and Reel (TR)
Current - Collector (Ic) (Max) :
500mA
Number of Terminations :
3
Current - Collector Cutoff (Max) :
100nA
Peak Reflow Temperature (Cel) :
240
JEDEC-95 Code :
TO-236AB
JESD-609 Code :
e0
Qualification Status :
COMMERCIAL
JESD-30 Code :
R-PDSO-G3
Transition Frequency :
50MHz
Package / Case :
TO-236-3, SC-59, SOT-23-3
RoHS Status :
Non-RoHS Compliant
Configuration :
Single
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Frequency - Transition :
50MHz
Transistor Application :
SWITCHING
Terminal Finish :
TIN LEAD
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
30
Operating Temperature :
-55°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 1V
Transistor Element Material :
SILICON
Pin Count :
3
Pbfree Code :
No
Surface Mount :
yes
Power - Max :
225mW
Polarity/Channel Type :
PNP
Voltage - Collector Emitter Breakdown (Max) :
60V
Mounting Type :
Surface Mount
Datasheets
MMBTA55LT3
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBTA55LT3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, MMBTA55LT3 pinout, MMBTA55LT3 datasheet PDF, MMBTA55LT3 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBTA55LT3 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBTA55LT3


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBTA55LT3 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 50MHz.The device has a 60V maximal voltage - Collector Emitter Breakdown.

MMBTA55LT3 Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz


MMBTA55LT3 Applications


There are a lot of Rochester Electronics, LLC
MMBTA55LT3 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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